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Segregation in materials : ウィキペディア英語版
Segregation in materials
Segregation in materials refers to the enrichment of a material constituent at a free surface or an internal interface of a material. In a polycrystalline solid, a segregation site can be a dislocation, grain boundary, stacking fault, or an interface with a precipitate or secondary phase within the solid. There are two recognized types of segregation: equilibrium segregation and non-equilibrium segregation.
== History ==
Equilibrium segregation is associated with the lattice disorder at interfaces, where thre are sites of energy different from those within the lattice at which the solute atoms can deposit themselves. The equilibrium segregation is so termed because the solute atoms segregate themselves to the interface or surface in accordance with the statistics of thermodynamics in order to minimize the overall free energy of the system. This sort of partitioning of solute atoms between the grain boundary and the lattice was predicted by McLean in 1957 ().
Non-equilibrium segregation, first theorized by Westbrook in 1964 (), occurs as a result of solutes coupling to vacancies which are moving to grain boundary sources or sinks during quenching or application of stress. It can also occur as a result of solute pile-up at a moving interface ().
There are two main features of non-equilibrium segregation, by which it is most easily distinguished from equilibrium segregation. In the non-equilibrium effect, the magnitude of the segregation increases with increasing temperature and the alloy can be homogenized without further quenching because its lowest energy state corresponds to a uniform solute distribution. In contrast, the equilibrium segregated state, by definition, is the lowest energy state in a system that exhibits equilibrium segregation, and the extent of the segregation effect decreases with increasing temperature. The details of non-equilibrium segregation are not going to be discussed here, but can be found in the review by Harries and Marwick ().

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